{"headerData":{"lastRefreshDate":"06 Jul 2026"},"publicationOverview":{"publication":{"id":"5D8FC58D-AD26-4294-A5E6-74FAA1063E63","resourceUrl":"http://gtr.ukri.org/api/publication/overview?outcomeid=65f1b1dbf301f&projectref=#grantRef#","outcomeId":"65f1b1dbf301f","title":"Lateral 1200v Sic Schottky Barrier Diode with Single Event Burnout Tolerance","parentPublicationTitle":null,"authors":[{"id":"7b67214e0f00849c74780105b6cad7dd","resourceUrl":"http://gtr.ukri.org/api/person/7b67214e0f00849c74780105b6cad7dd","firstName":null,"otherNames":"Qi Y","surname":null,"email":null,"orcidId":null,"displayName":"Qi Y","fullName":"Qi Y"}],"date":1704067200000,"digitalPublicationUrl":"http://dx.doi.org/10.2139/ssrn.4733583","pubMedId":null,"pubMedUrl":null,"isbn":null,"issn":null,"publicationUrl":"http://dx.doi.org/10.2139/ssrn.4733583","abstractText":null,"volume":null,"issue":null,"totalPages":null,"edition":null,"chapterNumber":null,"chapterTitle":null,"pageRef":null,"series":null,"type":"Preprint","firstAuthorName":"Qi Y","grantRef":null},"projects":[{"id":"3AD62745-5441-4E0A-9DCE-D24A33B046C4","resourceUrl":"http://gtr.ukri.org/projects?ref=EP/V000543/1","title":"Silicon Carbide Power Conversion for Telecommunications Satellite Applications","status":null,"grantReference":"EP/V000543/1","grantCategory":"Research Grant","abstractText":null,"potentialImpactText":null,"fund":{"valuePounds":746426,"start":null,"end":null,"funder":{"id":"798CB33D-C79E-4578-83F2-72606407192C","resourceUrl":"http://gtr.ukri.org/api/organisation/798CB33D-C79E-4578-83F2-72606407192C","name":"EPSRC"},"type":"INCOME_ACTUAL"},"output":null,"publications":null,"identifiers":null,"technicalSummary":null,"projectHierarchy":null,"studentshipHierarchy":null,"healthCategories":[],"researchActivities":[],"researchSubjects":[],"researchTopics":[],"rcukProgrammes":[],"hasClassifications":false}],"abstractSnippet":null}}