<?xml version="1.0" encoding="UTF-8"?><ns2:project xmlns:ns1="http://gtr.rcuk.ac.uk/gtr/api" xmlns:ns2="http://gtr.rcuk.ac.uk/gtr/api/project" xmlns:ns3="http://gtr.rcuk.ac.uk/gtr/api/fund" xmlns:ns4="http://gtr.rcuk.ac.uk/gtr/api/person" xmlns:ns5="http://gtr.rcuk.ac.uk/gtr/api/project/outcome" xmlns:ns6="http://gtr.rcuk.ac.uk/gtr/api/organisation" ns1:created="2026-06-03T15:52:43Z" ns1:href="http://gtr.ukri.org/gtr/api/projects/1A0DABC1-860D-4F16-ACDF-4B9C3599BD90" ns1:id="1A0DABC1-860D-4F16-ACDF-4B9C3599BD90"><ns1:links><ns1:link ns1:href="http://gtr.ukri.org/gtr/api/persons/A0673105-D71A-4030-B66E-7A40D15B8964" ns1:rel="PM_PER"/><ns1:link ns1:href="http://gtr.ukri.org/gtr/api/organisations/3B378765-024F-47AE-86A4-CD9AAB612EC0" ns1:rel="LEAD_ORG"/><ns1:link ns1:href="http://gtr.ukri.org/gtr/api/organisations/3B378765-024F-47AE-86A4-CD9AAB612EC0" ns1:rel="PARTICIPANT_ORG"/><ns1:link ns1:end="2015-10-31T00:00:00Z" ns1:href="http://gtr.ukri.org/gtr/api/funds/1BA578A6-4565-460C-9727-1A703D99AF91" ns1:rel="FUND" ns1:start="2014-08-31T23:00:00Z"/></ns1:links><ns2:identifiers><ns2:identifier ns2:type="RCUK">720563</ns2:identifier></ns2:identifiers><ns2:title>Seren Photonics - Development of 4&amp;quot; semipolar GaN templates for next generation Solid State Lighting</ns2:title><ns2:status>Closed</ns2:status><ns2:grantCategory>GRD Development of Prototype</ns2:grantCategory><ns2:leadFunder>Innovate UK</ns2:leadFunder><ns2:abstractText>The focus of this project is to demonstrate the feasibility of creating high quality low defect
density semi-polar GaN templates on 4” diameter wafers. To date, Seren Photonics has
demonstrated the ability to supply 2” diameter templates, which are currently being evaluated
by several Tier 1 LED manufacturers. In order to ensure the technology’s acceptance as a
commercially viable route to improving LED efficiency, reducing droop and enabling longer
wavelength emission (green and yellow), it is essential to demonstrate and develop a 4”
prototype that shows the true potential of the technology.
The program will address the move to 4” using two methods for creating nano and microstructures
on the wafers aimed at controlling and blocking defects. One using random
patterns, the second using a fixed pattern. Key to success will be the demonstration of
equivalent quality of crystal as seen on 2” and on demonstrating uniform performance across
the 4” wafers.</ns2:abstractText></ns2:project>