10120892QS-RACC Quantum Silicon carbide - Rapid Analysis of Colour CentresClosedCollaborative R&DInnovate UKQS-RACC, short for Quantum Silicon carbide -- Rapid Analysis of Colour Centres, develops measurement capability to identify, quantify and characterise the properties and concentration of the wider family of quantum colour centre defects fabricated in silicon carbide wafers. This project directly supports product development at Nascent Semiconductor, which is harnessing the unique properties of the wide band gap semiconductor silicon carbide to develop practical quantum-enabled solid-state MASERs and magnetometers that will underpin a sovereign capability in ruggedised Precision Navigation and Timing. The fundamental building block to these technologies is silicon carbide semiconductor chips with controlled incorporation of addressable quantum colour centre defects with spin and electronic properties suitable for interaction with microwave energies. The challenge in silicon carbide is the number of allowable defect states within the lattice structure, all with differing quantum properties, and how these can be controlled in manufacture to select the defect of choice. This is a key step to the realisation of a mass-manufacturable quantum device. The project harnesses existing knowledge at the National Physical Laboratory (NPL) in photoluminescence (PL) measurement of quantum defect systems to develop capability that enables the project partners to address the key challenge in characterising the wider defect family in silicon carbide -- the measurement itself. The defects undergo weak optical emission beyond 1000 nm wavelength, and there is currently no known capability in the UK for measuring them. The project will identify improvements to detection capability with a view to simplifying deployment of the measurement in an industrial setting. These developments will be coupled with Nascent Semiconductor's existing capability in Optically Detected Magnetic Resonance (ODMR) characterisation to design an upgraded system capable of probing the interaction with magnetic fields and microwave frequencies, such that the technologically relevant properties of the defect family and their impact on the quantum behaviour of current and future products can be measured directly. The intention is that the upgraded measurement capability will be used to inform on a modified fabrication run at Nascent Semiconductor aiming to further optimise the defect centres present which will be measured in the final stage of the project. The outcome of the project will deliver a report for the upgraded PL measurement setup capability and a design for long wavelength ODMR capability suitable to characterise technologically relevant quantum defects in silicon carbide, developing capability not currently available in the UK.