<?xml version="1.0" encoding="UTF-8"?><ns2:project xmlns:ns1="http://gtr.rcuk.ac.uk/gtr/api" xmlns:ns2="http://gtr.rcuk.ac.uk/gtr/api/project" xmlns:ns3="http://gtr.rcuk.ac.uk/gtr/api/fund" xmlns:ns4="http://gtr.rcuk.ac.uk/gtr/api/person" xmlns:ns5="http://gtr.rcuk.ac.uk/gtr/api/project/outcome" xmlns:ns6="http://gtr.rcuk.ac.uk/gtr/api/organisation" ns1:created="2026-07-08T08:44:08Z" ns1:href="http://gtr.ukri.org/gtr/api/projects/43034095-B7AD-4748-B3EA-FE3060E717E6" ns1:id="43034095-B7AD-4748-B3EA-FE3060E717E6"><ns1:links><ns1:link ns1:href="http://gtr.ukri.org/gtr/api/persons/60923176-B5B2-4027-92C0-88EF707023A2" ns1:rel="PM_PER"/><ns1:link ns1:href="http://gtr.ukri.org/gtr/api/organisations/78BC013C-4656-40A0-A480-CFDFA8D9879E" ns1:rel="LEAD_ORG"/><ns1:link ns1:href="http://gtr.ukri.org/gtr/api/organisations/78BC013C-4656-40A0-A480-CFDFA8D9879E" ns1:rel="PARTICIPANT_ORG"/><ns1:link ns1:href="http://gtr.ukri.org/gtr/api/organisations/17E91D0B-0B7A-4999-B0C0-2EE90BB7AC30" ns1:rel="PARTICIPANT_ORG"/><ns1:link ns1:href="http://gtr.ukri.org/gtr/api/organisations/4F273F3F-9009-467F-B852-F7BB4866DF68" ns1:rel="PARTICIPANT_ORG"/><ns1:link ns1:end="2025-09-29T23:00:00Z" ns1:href="http://gtr.ukri.org/gtr/api/funds/20DB850D-F019-4148-9553-1EC0F152F60E" ns1:rel="FUND" ns1:start="2024-03-31T23:00:00Z"/></ns1:links><ns2:identifiers><ns2:identifier ns2:type="RCUK">10094645</ns2:identifier></ns2:identifiers><ns2:title>SiC -ECM</ns2:title><ns2:status>Closed</ns2:status><ns2:grantCategory>Collaborative R&amp;D</ns2:grantCategory><ns2:leadFunder>Innovate UK</ns2:leadFunder><ns2:abstractText>Silicon carbide (SiC) is a ceramic, typically sintered-multicrystalline. Single-crystal SiC has semi-conducting properties superior to silicon allowing smaller and thinner transistors and integrated circuits (Semi-Conductors), able to work at higher temperature and higher current/frequency. A key application is power electronics, which are important for electric cars, etc. The SiC-Semi-Conductor market is large and growing rapidly; value &amp;pound;1.3bn in 2023 growing to &amp;pound;6bn in 2030 (CAGR 23.5%).

However, SiC is hard to cut leading to reject rates of up to 50% when conventional diamond machining is used.

We propose applying experience of electro-chemical -machining to improve the quality of SiC cutting and increase yield leading to a significant commercial potential in global markets.</ns2:abstractText></ns2:project>