<?xml version="1.0" encoding="UTF-8"?><ns2:project xmlns:ns1="http://gtr.rcuk.ac.uk/gtr/api" xmlns:ns2="http://gtr.rcuk.ac.uk/gtr/api/project" xmlns:ns3="http://gtr.rcuk.ac.uk/gtr/api/fund" xmlns:ns4="http://gtr.rcuk.ac.uk/gtr/api/person" xmlns:ns5="http://gtr.rcuk.ac.uk/gtr/api/project/outcome" xmlns:ns6="http://gtr.rcuk.ac.uk/gtr/api/organisation" ns1:created="2026-07-08T08:44:08Z" ns1:href="http://gtr.ukri.org/gtr/api/projects/71EAB950-6D92-4582-9365-8E441AF05842" ns1:id="71EAB950-6D92-4582-9365-8E441AF05842"><ns1:links><ns1:link ns1:href="http://gtr.ukri.org/gtr/api/organisations/79EADB7E-39E1-4A3C-935D-4B1B585AB726" ns1:rel="LEAD_ORG"/><ns1:link ns1:href="http://gtr.ukri.org/gtr/api/organisations/79EADB7E-39E1-4A3C-935D-4B1B585AB726" ns1:rel="PARTICIPANT_ORG"/><ns1:link ns1:end="2013-07-30T23:00:00Z" ns1:href="http://gtr.ukri.org/gtr/api/funds/96362492-B4F9-4432-B73D-0C88A17A7111" ns1:rel="FUND" ns1:start="2012-03-31T23:00:00Z"/></ns1:links><ns2:identifiers><ns2:identifier ns2:type="RCUK">710156</ns2:identifier></ns2:identifiers><ns2:title>Next Generation Photoresist Technology for Microchips</ns2:title><ns2:status>Closed</ns2:status><ns2:grantCategory>GRD Proof of Concept</ns2:grantCategory><ns2:leadFunder>Innovate UK</ns2:leadFunder><ns2:abstractText>Irresistible Materials (IM) is developing next generation ‘photo-resist materials’ for the
semiconductor industry. A photo-resist is a material that undergoes a change in its physical
and/or chemical properties when exposed to radiation. Within the semiconductor industry,
silicon substrates are coated by a photo-resist, and the resist is then selectively exposed to
radiation using an ‘exposure tool’ to create a pattern (photo-lithography). The resist is then
treated such that either the exposed or unexposed areas are dissolved. The remaining resist
patterns serve as a barrier that protects the underlying substrate, and once the substrate is
processed, the resist layer is stripped leaving lines (wires) used as the basis for today’s microchips.
Resists are thus critical to the semiconductor industry, and the ever decreasing size of
microelectronics is possible only through continuous advancements in lithography and resist
technologies. The progression to decreased size is mapped out in the International Technology
Roadmap for Semiconductors (ITRS), revised annually by a worldwide panel of
semiconductor experts, which sets out performance goals for the industry. Existing
photolithography (where the radiation used is 193nm wavelength light) is reaching its limit,
and is unlikely to meet industry goals for 2016. Accordingly, next-generation lithographies
(NGL’s) are being sought to take over in 2016. The leading candidate of NGL’s is extreme
ultraviolet lithography (EUV), where the wavelength of the radiation (light source) is reduced
to 13.5nm enabling higher resolution patterns, and thus smaller micro-chip wires. However,
presently there are two major problems with EUV lithography:
1. EUV exposure tools are very expensive: $billions are being invested into new EUV
equipment to address this.
2. There is no EUV compatible resist material that meets the 2016 targets: Irresistible
Materials Ltd has developed a patented material that directly addresses this issue.</ns2:abstractText></ns2:project>