<?xml version="1.0" encoding="UTF-8"?><ns2:project xmlns:ns1="http://gtr.rcuk.ac.uk/gtr/api" xmlns:ns2="http://gtr.rcuk.ac.uk/gtr/api/project" xmlns:ns3="http://gtr.rcuk.ac.uk/gtr/api/fund" xmlns:ns4="http://gtr.rcuk.ac.uk/gtr/api/person" xmlns:ns5="http://gtr.rcuk.ac.uk/gtr/api/project/outcome" xmlns:ns6="http://gtr.rcuk.ac.uk/gtr/api/organisation" ns1:created="2026-06-03T15:52:43Z" ns1:href="http://gtr.ukri.org/gtr/api/projects/72E2F55D-20F6-49B9-BFC4-08879A3DF515" ns1:id="72E2F55D-20F6-49B9-BFC4-08879A3DF515"><ns1:links><ns1:link ns1:href="http://gtr.ukri.org/gtr/api/persons/EC84EF52-5F0C-4D6C-832E-C1C0C7834176" ns1:rel="PM_PER"/><ns1:link ns1:href="http://gtr.ukri.org/gtr/api/organisations/A7511831-607B-4196-A226-870292A6A98D" ns1:rel="LEAD_ORG"/><ns1:link ns1:href="http://gtr.ukri.org/gtr/api/organisations/A7511831-607B-4196-A226-870292A6A98D" ns1:rel="PARTICIPANT_ORG"/><ns1:link ns1:end="2028-03-30T23:00:00Z" ns1:href="http://gtr.ukri.org/gtr/api/funds/5D7EC48A-309C-4750-B264-A66968B2EAEB" ns1:rel="FUND" ns1:start="2024-03-31T23:00:00Z"/></ns1:links><ns2:identifiers><ns2:identifier ns2:type="RCUK">10106730</ns2:identifier></ns2:identifiers><ns2:title>High mobilitY Printed nEtwoRks of 2D Semiconductors for advanced electrONICs</ns2:title><ns2:status>Active</ns2:status><ns2:grantCategory>EU-Funded</ns2:grantCategory><ns2:leadFunder>Horizon Europe Guarantee</ns2:leadFunder><ns2:abstractText>FFuture technological innovations in areas such as the Internet of things and wearable electronics require cheap, easily deformable and reasonably performing printed electronic circuitries. However, currentstate-of-the-art (SoA) printed electronic devicesshow mobilities of ~10 cm2/Vs, about &amp;times;100 lower than traditional Si-electronics. A promising solution to print devices from 2D semiconducting nanosheets gives relatively low mobilities (~0.1 cm2/Vs) due to the rate-limiting nature of charge transfer (CT) across inter-nanosheet junctions. By minimising the junction resistance RJ, the mobility of printed devices could match that of individual nanosheets, i.e., up to 1000 cm2/Vs for phosphorene, competing with Si. HYPERSONIC is a high-risk, high-gain interdisciplinary project exploiting new chemical and physical approaches to minimise RJ in printed nanosheet networks, leading to ultra-cheap printed devices with a performance &amp;times;10–100 beyond the SoA. The chemical approach relies on chemical crosslinking of nanosheets with (semi)conducting molecules to boost inter-nanosheet CT. The physical approach involves synthesising high-aspect-ratio nanosheets, leading to low bending rigidity and increased inter-nanosheet interactions, yielding conformal, large-area junctions of &amp;gt;10e4 nm2 to dramatically reduce RJ. Our radical new technology will use a range of n- or p-type nanosheets to achieve printed networks with mobilities of up to 1000 cm2/Vs. A comprehensive electrical characterisation of all nanosheet networks will allow us to not only identify those with ultra-high mobility but also to fully control the relation between basic physics/chemistry and network mobility. We will demonstrate the utility of our technology by using our best-performing networks as complementary field-effect devices in next- generation, integrated, wearable sensor arrays. Printed digital and analog circuits will read and amplify sensor signals, demonstrating a potential commercialisable application.</ns2:abstractText></ns2:project>