<?xml version="1.0" encoding="UTF-8"?><ns2:project xmlns:ns1="http://gtr.rcuk.ac.uk/gtr/api" xmlns:ns2="http://gtr.rcuk.ac.uk/gtr/api/project" xmlns:ns3="http://gtr.rcuk.ac.uk/gtr/api/fund" xmlns:ns4="http://gtr.rcuk.ac.uk/gtr/api/person" xmlns:ns5="http://gtr.rcuk.ac.uk/gtr/api/project/outcome" xmlns:ns6="http://gtr.rcuk.ac.uk/gtr/api/organisation" ns1:created="2026-06-22T07:57:45Z" ns1:href="http://gtr.ukri.org/gtr/api/projects/9EB70057-356B-45E7-A8A9-5BA31DD227B2" ns1:id="9EB70057-356B-45E7-A8A9-5BA31DD227B2"><ns1:links><ns1:link ns1:href="http://gtr.ukri.org/gtr/api/persons/B7F2F686-79BC-4481-AFBB-8B599D1FA9F1" ns1:rel="PM_PER"/><ns1:link ns1:href="http://gtr.ukri.org/gtr/api/organisations/F092F4B5-06D1-46C1-840F-90B7399F60E7" ns1:rel="LEAD_ORG"/><ns1:link ns1:href="http://gtr.ukri.org/gtr/api/organisations/F092F4B5-06D1-46C1-840F-90B7399F60E7" ns1:rel="PARTICIPANT_ORG"/><ns1:link ns1:end="2025-11-30T00:00:00Z" ns1:href="http://gtr.ukri.org/gtr/api/funds/3DCDE104-9492-4155-979B-21EF0EDC5A12" ns1:rel="FUND" ns1:start="2023-12-01T00:00:00Z"/></ns1:links><ns2:identifiers><ns2:identifier ns2:type="RCUK">10090177</ns2:identifier></ns2:identifiers><ns2:title>PHILARIS: Probing by Heavy Ions and Lasers for an Assessment of Radiation-hardness in Integrated Semiconductors</ns2:title><ns2:status>Closed</ns2:status><ns2:grantCategory>Collaborative R&amp;D</ns2:grantCategory><ns2:leadFunder>Innovate UK</ns2:leadFunder><ns2:abstractText>Single-event effects occur when one, highly energetic space radiation particle, such as a cosmic ray, hits an electronic chip and causes it to malfunction or even be destroyed. Designers of rad hard devices strive to counter these effects by testing in large particle accelerators but there is insufficient beam time to go round and this slows down developments and increases risk for missions. Using a pulsed laser has recently been shown to deliver similar effects on a device and the aim of this project is to demonstrate the effectiveness of the technique for a real space application.

By bringing together a leading radiation test house and manufacturer of laser test systems, a designer of complex rad-hard semiconductors and a respected cyclotron irradiation facility, this project provides a rare opportunity for the industry to make a significant step forward in the field of radiation effects. Establishing laser testing as a viable option during the development of rad-hard semiconductors will speed up developments, reduce risk and allow the facilities to be used for the final verification of successful products, rather than random tests.</ns2:abstractText></ns2:project>