10088072aDvance gAN device teChnology dEvelopment: DANCEActiveCollaborative R&DInnovate UKAdvanced GaN Device Technology Development project (DANCE) will aim to develop a vertical GaN device rated at 1.2kV. A suitable package for 1.2kV GaN will also be developed within the project and devices tested for reliability. GaN power devices offer very higher-frequency operation and reduced power dissipation enabling more efficient system performance while having a smaller form factor and reduced weight. There are currently no 1.2kV GaN MOSFET devices available on the market. The only commercial GaN power devices available today are lateral high electron mobility transistors (HEMTs) built on AlGaN/GaN/Si wafers where hetero-epitaxy limits their breakdown capability to ~650V and leads to long term reliability and dynamic on-state (Rdson) problems. The 1.2kV GaN MOSFET development proposed here will use GaN-on-GaN substrate which use homo-epitaxy allowing development of reliable GaN power devices with much higher voltages. Partners from the UK (SPTS, Camutronics, CSAC) and Taiwan (ITRI, Innolux) will collaborate closely on both front-end and back-end activities and will cover all steps needed to form a reliable 12kV GaN solution: epi-growth and process development (SPTS, ITRI), device design optimization (Camutronics, ITRI), wafer processing (SPTS, ITRI), testing (Camutronics, ITRI) and package development and reliability testing (CSAC, Innolux, ITRI). Novel processing techniques for forming U-shaped trenches will be developed which are needed to reduce electric field at the trench bottom. In addition to this, a suitable deep trench etch recipe will also be developed which is needed for the termination area of the die. Crucially, reliable gate oxides also need to be developed. In terms of epi growth, processing partners from the UK and Taiwan will work jointly on developing epi layers which are sufficiently thick for 1.2kV devices and low in defects needed for high current devices. In parallel with device development, partners from the UK and Taiwan will develop assembly techniques suitable for 1.2kV devices using new interconnection recipes, bumping and 3D printing. Fabricated devices will be assembled into developed packages and tested for reliability to ensure they can be used in the applications.