730092ERDF High Efficiency Power Electronics ModuleClosedLegacy RDA Grant for R&DInnovate UKThis project is to develop a prototype high efficiency and reliability insulated gate bipolar transistor (IGBT) with an innovative gate drive that will eventually be used widely in power switching applications. The project will deliver a standard component with lower losses, higher reliability and improved observability. The main deliverable will be a field tested prototype plus a prototype web service and a demonstration inverter.