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Charles Foxon

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£910,916

Apr 17 - Oct 21

Strain-engineered graphene: growth, modification and electronic properties

EPSRC award to University of Nottingham and Peter Beton

£481,396

May 14 - May 17

Molecular Beam Epitaxy of Boron Nitride and Graphene layers and heterostructures.

EPSRC award to University of Nottingham and Sergei Novikov

£688,437

Jul 13 - Jan 17

Free-standing wurtzite AlGaN substrates for deep ultraviolet (DUV) devices.

EPSRC award to University of Nottingham and Sergei Novikov

£274,125

May 13 - Aug 15

Development of new CuMn-V epitaxial antiferromagnetic semiconductors for applications in spintronics

EPSRC award to University of Nottingham and Richard Campion

£6,196,717

Mar 13 - Aug 18

Silicon Compatible GaN Power Electronics

EPSRC award to University of Glasgow and Iain Thayne

£481,553

Jun 12 - Jun 16

Nanoscale characterisation of nitride semiconductor thin films using EBSD, ECCI, CL and EBIC.

EPSRC award to University of Strathclyde and Carol Trager-Cowan

£429,592

Sep 11 - Sep 14

Solar cells based on InGaN nanostructures

EPSRC award to University of Bristol and David Cherns

£416,206

Jan 11 - Jun 14

Amorphous and crystalline GaNAs alloys for solar energy conversion devices

EPSRC award to University of Nottingham and Sergei Novikov

£277,965

Feb 10 - Jan 14

Spin Transfer Torque in Ferromagnetic Semiconductors and Hybrid Devices for Nanospintronics

EPSRC award to University of Nottingham and Bryan Gallagher

£621,759

Sep 09 - Mar 14

Terahertz acoustic laser (saser) devices: fabrication and characterisation

EPSRC award to University of Nottingham and Anthony Kent

£343,688

Sep 09 - Mar 13

Feasibility study of plasma-assisted electroepitaxy for the growth of GaN layers and bulk crystals

EPSRC award to University of Nottingham and Sergei Novikov

£356,349

Aug 09 - Aug 12

Free-standing zinc-blende (cubic) GaN, AlN and AlGaN layers grown by molecular beam epitaxy

EPSRC award to University of Nottingham and Sergei Novikov

£43,745

Aug 08 - Aug 09

Feasibility study of growth by MBE of As doped GaN layers for photoanode applications in hydrogen production by photoelectrochemical water splitting

EPSRC award to University of Nottingham and Sergei Novikov

£14,222

Nov 07 - Apr 08

Defect reduction in GaN using the in-situ growth of transition metal nitride layers

EPSRC award to University of Nottingham and Anthony Kent

£271,853

Jan 07 - Mar 10

Investigation of growth kinetics and incorporation of impurities in group III-nitrides and group III-dilute nitrides using mass spectroscopy

EPSRC award to University of Nottingham and Charles Foxon

£210,490

Dec 06 - Nov 08

Growth of thick and flat high quality GaN using nano-column compliant layers

EPSRC award to University of Nottingham and Richard Campion

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