1.3 µm InAs/GaAs quantum-dot laser monolithically grown on Si substrates operating over 100°C (2014)

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1049/el.2014.2414

Publication URI: http://dx.doi.org/10.1049/el.2014.2414

Type: Journal Article/Review

Parent Publication: Electronics Letters

Issue: 20