Two coexisting mechanisms of dislocation reduction in an AlGaN layer grown using a thin GaN interlayer (2007)
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.2790813
Publication URI: http://dx.doi.org/10.1063/1.2790813
Type: Journal Article/Review
Parent Publication: Applied Physics Letters
Issue: 13