Titania/alumina bilayer gate insulators for InGaAs metal-oxide-semiconductor devices (2011)
Attributed to:
III-V MOSFETs for Ultimate CMOS
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.3662966
Publication URI: http://dx.doi.org/10.1063/1.3662966
Type: Journal Article/Review
Parent Publication: Applied Physics Letters
Issue: 23