Contact resistance measurement of Ge 2 Sb 2 Te 5 phase change material to TiN electrode by spacer etched nanowire (2014)
Attributed to:
EPSRC Centre for Innovative Manufacturing in Photonics
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1088/0268-1242/29/9/095003
Publication URI: http://dx.doi.org/10.1088/0268-1242/29/9/095003
Type: Journal Article/Review
Parent Publication: Semiconductor Science and Technology
Issue: 9