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InAlN high electron mobility transistor Ti/Al/Ni/Au Ohmic contact optimisation assisted by in-situ high temperature transmission electron microscopy (2015)

First Author: Smith M

Attributed to: Lighting the Future funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4930880

Publication URI: http://dx.doi.org/10.1063/1.4930880

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 11