Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18N (2015)
Abstract
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Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.4928667
Publication URI: http://dx.doi.org/10.1063/1.4928667
Type: Journal Article/Review
Parent Publication: Applied Physics Letters
Issue: 7