Fabrication of high-aspect ratio GaN nanostructures for advanced photonic devices (2016)

First Author: Le Boulbar E
Attributed to:  Manufacturing of nano-engineered III-nitride semiconductors funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.mee.2016.03.058

Publication URI: http://dx.doi.org/10.1016/j.mee.2016.03.058

Type: Journal Article/Review

Parent Publication: Microelectronic Engineering