Evolution of the m -Plane Quantum Well Morphology and Composition within a GaN/InGaN Core-Shell Structure (2017)
Attributed to:
Manufacturing of nano-engineered III-nitride semiconductors
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1021/acs.cgd.6b01281
Publication URI: http://dx.doi.org/10.1021/acs.cgd.6b01281
Type: Journal Article/Review
Parent Publication: Crystal Growth & Design
Issue: 2