Investigation of indium gallium nitride facet-dependent nonpolar growth rates and composition for core-shell light-emitting diodes (2016)

First Author: Gîrgel I
Attributed to:  Manufacturing of nano-engineered III-nitride semiconductors funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1117/1.jnp.10.016010

Publication URI: http://dx.doi.org/10.1117/1.jnp.10.016010

Type: Journal Article/Review

Parent Publication: Journal of Nanophotonics

Issue: 1