📣 Try out the NEW Gateway to Research and let us know what you think.

We're looking for users to test the new service during August and September and share their feedback. Express your interest by completing this short form.

Increased Mobility in Enhancement Mode 4H-SiC MOSFET Using a Thin SiO 2 / Al 2 O 3 Gate Stack (2018)

First Author: Arith F

Attributed to: Underpinning Power Electronics 2012: Devices Theme funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/led.2018.2807620

Publication URI: http://dx.doi.org/10.1109/led.2018.2807620

Type: Journal Article/Review

Parent Publication: IEEE Electron Device Letters

Issue: 4