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High Electron Mobility and Insights into Temperature-Dependent Scattering Mechanisms in InAsSb Nanowires. (2018)

First Author: Boland JL
Attributed to:  III-V Semiconductor Nanowires: Attaining Control over Doping and Heterointerfaces funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1021/acs.nanolett.8b00842

PubMed Identifier: 29717874

Publication URI: http://europepmc.org/abstract/MED/29717874

Type: Journal Article/Review

Volume: 18

Parent Publication: Nano letters

Issue: 6

ISSN: 1530-6984