Conditional Dispersive Readout of a CMOS Single-Electron Memory Cell (2018)
Attributed to:
Quantum technology capital: QUES2T (Quantum Engineering of Solid-state Technologies)
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1103/physrevapplied.9.054016
Publication URI: http://dx.doi.org/10.1103/physrevapplied.9.054016
Type: Journal Article/Review
Parent Publication: Physical Review Applied
Issue: 5