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Low-Loss 800-V Lateral IGBT in Bulk Si Technology Using a Floating Electrode (2018)

First Author: Pathirana V

Attributed to: Sir Henry Royce Institute - Cambridge Equipment funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/led.2018.2831598

Publication URI: http://dx.doi.org/10.1109/led.2018.2831598

Type: Journal Article/Review

Parent Publication: IEEE Electron Device Letters

Issue: 6