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Investigation of the Dual Implant Reverse-Conducting SuperJunction Insulated-Gate Bipolar Transistor (2019)

First Author: Findlay E

Attributed to: New Power Device Architectures in Silicon funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/led.2019.2911994

Publication URI: http://dx.doi.org/10.1109/led.2019.2911994

Type: Journal Article/Review

Parent Publication: IEEE Electron Device Letters

Issue: 6