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Passivation of thermally-induced defects with hydrogen in float-zone silicon (2021)

First Author: De Guzman J

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/1361-6463/abf807

Publication URI: http://dx.doi.org/10.1088/1361-6463/abf807

Type: Journal Article/Review

Parent Publication: Journal of Physics D: Applied Physics

Issue: 27