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Development of High-Quality Gate Oxide on 4H-SiC Using Atomic Layer Deposition (2020)

First Author: Renz A

Attributed to: Ultra-high voltage (>30KV) power devices through superior materials for HVDC transmission funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.4028/www.scientific.net/msf.1004.547

Publication URI: http://dx.doi.org/10.4028/www.scientific.net/msf.1004.547

Type: Journal Article/Review

Parent Publication: Materials Science Forum