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Study of Drain Injected Breakdown Mechanisms in AlGaN/GaN-on-SiC HEMTs (2022)

First Author: Yang F

Attributed to: High Performance Buffers for RF GaN Electronics funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ted.2021.3138841

Publication URI: http://dx.doi.org/10.1109/ted.2021.3138841

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Electron Devices

Issue: 2