Non-destructive imaging of residual strains in GaN and their effect on optical and electrical properties using correlative light-electron microscopy (2022)
Attributed to:
Nanoscale characterisation of nitride semiconductor thin films using EBSD, ECCI, CL and EBIC
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/5.0080024
Publication URI: http://dx.doi.org/10.1063/5.0080024
Type: Journal Article/Review
Parent Publication: Journal of Applied Physics
Issue: 7