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Influence of Al x Ga 1-x N nucleation layers on MOVPE-grown zincblende GaN epilayers on 3C-SiC/Si(001) (2022)

First Author: Gundimeda A

Attributed to: Sir Henry Royce Institute - Cambridge Equipment funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/1361-6463/ac4c58

Publication URI: http://dx.doi.org/10.1088/1361-6463/ac4c58

Type: Journal Article/Review

Parent Publication: Journal of Physics D: Applied Physics

Issue: 17