(Invited, Digital Presentation) Improved Reliability of 4H-SiC Metal-Oxide-Semiconductor Devices Utilising Atomic Layer Deposited Layers with Enhanced Interface Quality (2022)
Attributed to:
Ultra-high voltage (>30KV) power devices through superior materials for HVDC transmission
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1149/ma2022-01191065mtgabs
Publication URI: http://dx.doi.org/10.1149/ma2022-01191065mtgabs
Type: Journal Article/Review
Parent Publication: ECS Meeting Abstracts
Issue: 19