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(Invited, Digital Presentation) Improved Reliability of 4H-SiC Metal-Oxide-Semiconductor Devices Utilising Atomic Layer Deposited Layers with Enhanced Interface Quality (2022)

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1149/10802.0043ecst

Publication URI: http://dx.doi.org/10.1149/10802.0043ecst

Type: Journal Article/Review

Parent Publication: ECS Transactions

Issue: 2