📣 Try out the NEW Gateway to Research and let us know what you think.

We're looking for users to test the new service during August and September and share their feedback. Express your interest by completing this short form.

SiC Doping Impact during Conducting AFM under Ambient Atmosphere. (2023)

First Author: Villeneuve-Faure C
Attributed to:  Ultra-high voltage (>30KV) power devices through superior materials for HVDC transmission funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.3390/ma16155401

PubMed Identifier: 37570104

Publication URI: http://europepmc.org/abstract/MED/37570104

Type: Journal Article/Review

Volume: 16

Parent Publication: Materials (Basel, Switzerland)

Issue: 15

ISSN: 1996-1944