Time domain simulation of statistical variability and oxide degradation including trapping/detrapping dynamics (2012)

First Author: Markov S.
Attributed to:  Molecular-Metal-Oxide-nanoelectronicS (M-MOS): Achieving the Molecular Limit funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Type: Other

Parent Publication: International Conference on Simulation of Semiconductor Processes and Devices, SISPAD