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Silicon as a model ion trap: time domain measurements of donor Rydberg states (2008)

First Author: Vinh N

Attributed to: Far Infra-Red Emission and Lasing in Doped Semiconductors funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.48550/arxiv.0812.0148

Publication URI: https://arxiv.org/abs/0812.0148

Type: Other