Demonstration of Si based InAs/GaSb type-II superlattice p-i-n photodetector (2019)
Attributed to:
High performance III-V quantum dot photodetectors for low SWaP infrared devices
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.48550/arxiv.1906.07351
Publication URI: https://arxiv.org/abs/1906.07351
Type: Other