A comparison of ZnMgSSe and MgS wide bandgap semiconductors used as barriers: Growth, structure and luminescence properties (2009)
Attributed to:
Development of Semiconductor structures for Spin current detection
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.jcrysgro.2008.10.040
Publication URI: http://dx.doi.org/10.1016/j.jcrysgro.2008.10.040
Type: Journal Article/Review
Parent Publication: Journal of Crystal Growth
Issue: 7