A complementary geometric model for the growth of GaN nanocolumns prepared by plasma-assisted molecular beam epitaxy (2009)

First Author: Foxon C
Attributed to:  Growth of thick and flat high quality GaN using nano-column compliant layers funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.jcrysgro.2009.04.021

Publication URI: http://dx.doi.org/10.1016/j.jcrysgro.2009.04.021

Type: Journal Article/Review

Parent Publication: Journal of Crystal Growth

Issue: 13