E0ED1215-813C-469A-8298-D85F900217B8Renaissance GermaniumResearch GrantEP/F032633/1798CB33D-C79E-4578-83F2-72606407192CEPSRCINCOME_ACTUAL37208241DDFD3E-3EE3-4F23-8EFA-213F664D7D63Simulation study of the 20nm gate-length Ge implant-free quantum well p-MOSFETMicroelectronic Engineering35301fe05f391b75e52c10db399cae9eChan K2011-01-01http://dx.doi.org/10.1016/j.mee.2010.09.025http://dx.doi.org/10.1016/j.mee.2010.09.0254Journal Article/Reviewdoi_53d001001194e9b1