Simulation of hole-mobility in doped relaxed and strained Ge (2011)

First Author: Watling J

Attributed to: Renaissance Germanium funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.mee.2010.11.017

Publication URI: http://dx.doi.org/10.1016/j.mee.2010.11.017

Type: Journal Article/Review

Parent Publication: Microelectronic Engineering

Issue: 4