📣 Try out the NEW Gateway to Research and let us know what you think.

We're looking for users to test the new service during August and September and share their feedback. Express your interest by completing this short form.

The measured dependence of the lateral ambipolar diffusion length on carrier injection-level in Stranski-Krastanov quantum dot devices (2010)

First Author: Naidu D
Attributed to:  Platform Renewal - Optical gain and recombination in structured materials funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.3471812

Publication URI: http://dx.doi.org/10.1063/1.3471812

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 4