Origin of the Asymmetry in the Magnitude of the Statistical Variability of n- and p-Channel Poly-Si Gate Bulk MOSFETs (2008)
Attributed to:
Meeting the design challenges of the nano-CMOS electronics
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/led.2008.2000843
Publication URI: http://dx.doi.org/10.1109/led.2008.2000843
Type: Journal Article/Review
Parent Publication: IEEE Electron Device Letters
Issue: 8