Analysis of Threshold Voltage Distribution Due to Random Dopants: A 100 000-Sample 3-D Simulation Study (2009)

First Author: Reid D
Attributed to:  Meeting the design challenges of the nano-CMOS electronics funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ted.2009.2027973

Publication URI: http://dx.doi.org/10.1109/ted.2009.2027973

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Electron Devices

Issue: 10