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Direct Tunnelling Gate Leakage Variability in Nano-CMOS Transistors (2010)

First Author: Markov S

Attributed to: Atomic Scale Simulation of Nanoelectronic Devices funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ted.2010.2075932

Publication URI: http://dx.doi.org/10.1109/ted.2010.2075932

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Electron Devices

Issue: 11