Drain Current Collapse in Nanoscaled Bulk MOSFETs Due to Random Dopant Compensation in the Source/Drain Extensions (2011)

First Author: Markov S
Attributed to:  Meeting the design challenges of the nano-CMOS electronics funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ted.2011.2152845

Publication URI: http://dx.doi.org/10.1109/ted.2011.2152845

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Electron Devices

Issue: 8