Random-Dopant-Induced Drain Current Variation in Nano-MOSFETs: A Three-Dimensional Self-Consistent Monte Carlo Simulation Study Using " Ab Initio " Ionized Impurity Scattering (2008)
Attributed to:
Meeting the design challenges of the nano-CMOS electronics
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/ted.2008.2004647
Publication URI: http://dx.doi.org/10.1109/ted.2008.2004647
Type: Journal Article/Review
Parent Publication: IEEE Transactions on Electron Devices
Issue: 11