Multiscale Modelling of Metal-Semiconductor Contacts for the Next Generation of Nanoscale Transistors
Lead Research Organisation:
University College London
Department Name: Physics and Astronomy
Abstract
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Publications
Aldegunde M
(2014)
Multi-scale simulations of a Mo/ n + -GaAs Schottky contact for nano-scale III-V MOSFETs
in Semiconductor Science and Technology
Chambers S
(2015)
Dominance of Interface Chemistry over the Bulk Properties in Determining the Electronic Structure of Epitaxial Metal/Perovskite Oxide Heterojunctions
in Chemistry of Materials
Hepplestone S
(2014)
Effect of metal intermixing on the Schottky barriers of Mo(100)/GaAs(100) interfaces
in Journal of Applied Physics
Schusteritsch G
(2015)
First-principles structure determination of interface materials: The Ni x InAs nickelides
in Physical Review B
| Description | This is a project that I took over from Peter Sushko on his departure to the US. Working with the PDRA, Steven Hepplestone we combined his expertise in metal-semiconductor interfaces with our evolving technique of first principle interface/grain boundary prediction. At the end of the project Steven moved his expertise to Delagara (an energy start-up), and then on to a Lectureship at Exeter. |
| Exploitation Route | The combined approach of first principles interface prediction, and property analysis will prove useful in the semiconductor industry. |
| Sectors | Aerospace, Defence and Marine,Chemicals,Electronics,Energy |