Characterization of Negative-Bias Temperature Instability of Ge MOSFETs With <inline-formula> <tex-math notation="TeX">${\rm GeO}_{2}/{\rm Al}_{2}{\rm O}_{3}$ </tex-math></inline-formula> Stack (2014)
Attributed to:
High permittivity dielectrics on Ge for end of Roadmap application
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/ted.2014.2314178
Publication URI: http://dx.doi.org/10.1109/ted.2014.2314178
Type: Journal Article/Review
Parent Publication: IEEE Transactions on Electron Devices
Issue: 5