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GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE (2009)

First Author: Zhu D

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1117/12.814919

Publication URI: http://dx.doi.org/10.1117/12.814919

Type: Conference/Paper/Proceeding/Abstract