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Reduction of the dislocation density in HVPE-grown GaN epi-layers by an in situ SiNx treatment (2010)

First Author: Ashraf H

Attributed to: Nitrides for the 21st century funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.jcrysgro.2009.11.043

Publication URI: http://dx.doi.org/10.1016/j.jcrysgro.2009.11.043

Type: Journal Article/Review

Parent Publication: Journal of Crystal Growth

Issue: 4