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Structure and strain relaxation effects of defects in In x Ga1- x N epilayers (2014)

First Author: Rhode S

Attributed to: Nitrides for the 21st century funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4894688

Publication URI: http://dx.doi.org/10.1063/1.4894688

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 10